Strained-Si on Si Ge MOSFET Inversion Layer Centroid Modeling
نویسندگان
چکیده
An accurate model for the inversion charge centroid of strained-Si on Si Ge metal-oxide semiconductor field effect transistors (MOSFETs) has been developed including the dependencies on the germanium mole fraction, the doping concentration, and the width of the strained-Si layer. We have also obtained a good estimation of the inversion charge. The inclusion of quantum effects in classical simulators by means of a corrected gate-oxide width can be easily performed making use of this new model.
منابع مشابه
Strained-Si single-gate versus unstrained-Si double-gate MOSFETs
Self-consistent full-band Monte Carlo simulations are employed to compare the performance of nanoscale strained-Si single-gate (SG) and unstrained-Si double-gate (DG) MOSFETs for a gate length of 25 nm. Almost the same on-current as in the DG-MOSFET can be achieved by strain in a SG-MOSFET for the same gate overdrive. This is due to the compensation of the higher electron sheet density in the t...
متن کاملExtraction of large valence-band energy offsets and comparison to theoretical values for strained-Si/strained- Ge type-II heterostructures on relaxed SiGe substrates
Metal-oxide-semiconductor capacitors were fabricated on type-II staggered gap strained-Si/strained-Ge heterostructures epitaxially grown on relaxed SiGe substrates of various Ge fractions. Quasistatic quantummechanical capacitance-voltage (CV) simulations were fit to experimental CV measurements to extract the band alignment of the strained layers. The valence-band offset of the strained-Si/str...
متن کاملFabrication and Analysis of Deep Submicron Strained - Si N - MOSFET ’ s
Deep submicron strained-Si n-MOSFET’s were fabricated on strained Si/relaxed Si0 8Ge0 2 heterostructures. Epitaxial layer structures were designed to yield well-matched channel doping profiles after processing, allowing comparison of strained and unstrained Si surface channel devices. In spite of the high substrate doping and high vertical fields, the MOSFET mobility of the strained-Si devices ...
متن کاملHigh Mobility Strained Si/SiGe Heterostructure MOSFETs
Strained Siand SiGe-based heterostructure MOSFETs grown on relaxed SiGe virtual substrates exhibit dramatic electron and hole mobility enhancements over bulk Si, making them promising candidates for next generation CMOS devices. The most heavily investigated heterostructures consist of a single strained Si layer grown upon a relaxed SiGe substrate. While this configuration offers significant pe...
متن کاملMOSFET Channel Engineering using Strained Si, SiGe, and Ge Channels
Biaxial tensile strained Si grown on SiGe virtual substrates will be incorporated into future generations of CMOS technology due to the lack of performance increase with scaling. Compressively strained Ge-rich alloys with high hole mobilities can also be grown on relaxed SiGe. We review progress in strained Si and dual channel heterostructures, and also introduce high hole mobility digital allo...
متن کامل